| PART |
Description |
Maker |
| AS200-313 |
As200-313:PHEMT GAAS ic 2 W High Linearity 5 6
|
Skyworks
|
| AS219-000 |
PHEMT GaAs IC High Linearity 3 V T/R SP3T Switch 0.1-2.5 GHz
|
Skyworks Solutions Inc.
|
| 636ST89E HMC636ST8911 HMC636ST89E |
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| AS225-313 |
PHEMT GaAs IC 1 W High Linearity 0.1-6 GHz SPDT Switch
|
Skyworks Solutions
|
| AS193-000 |
PHEMT GaAs IC High-Linearity 3 V Control SPDT 0.1-2.5 GHz Switch Chip
|
Skyworks Solutions Inc.
|
| IAM-92516 IAM-92516-TR1 IAM-92516-TR2 IAM-92516-BL |
IAM-92516 · Low Cost, High Linearity, Low LO Drive, Up and Down converter
High Linearity GaAs FET Mixer
From old datasheet system
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| FPD1050SOT89 FPD1050SOT89E FPD1050SOT891 |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
Filtronic Compound Semicond...
Filtronic Compound Semiconductors
|
| EB1500DFN-BA EB1500DFN-BB EB1500DFN-BC EB1500DFN-B |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT
Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT
GALLIUM ARSENIDE PHEMT
|
MOTOROLA[Motorola, Inc]
|
